標題: Effects in carrier dynamics of Isolectronic In doped in GaN films grown by metalorganic vapor phase epitaxy
作者: Huang, HY
Shu, CK
Lin, WC
Liao, KC
Chuang, CH
Lee, MC
Chen, WH
Chen, WK
Lee, YY
電子物理學系
Department of Electrophysics
關鍵字: GaN;recombination life time;isoelectronic doping
公開日期: 2000
摘要: Time-resolved photoluminescence spectra were used to characterize isoelectronically doped GaN:In films. Our results indicate that the recombination lifetime of donor-bound-exciton transition of pure GaN exhibits strong dependence on temperature. When In is doped into GaN, the recombination lifetime decreases sharply from 68 ps to 30 ps, irregardless of measured temperature and In doping concentration. The cause for this appearance is not clear at present. It might be related to the isoelectronic In impurity itself in GaN, which creates shallow energy levels that predominate the recombination process.
URI: http://hdl.handle.net/11536/19233
ISBN: 4-900526-13-4
期刊: PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS
Volume: 1
起始頁: 610
結束頁: 613
Appears in Collections:Conferences Paper