CHARACTERISTICS OF GRADED-LIKE MULTIPLE-DELTA-DOPED GAAS FIELD-EFFECT TRANSISTORS

Full metadata record

DC Field	Value	Language
dc.contributor.author	KAO, MJ	en_US
dc.contributor.author	HSU, WC	en_US
dc.contributor.author	HSU, RT	en_US
dc.contributor.author	WU, YH	en_US
dc.contributor.author	LIN, TY	en_US
dc.contributor.author	CHANG, CY	en_US
dc.date.accessioned	2014-12-08T15:03:23Z	-
dc.date.available	2014-12-08T15:03:23Z	-
dc.date.issued	1995-05-08	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.113148	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1923	-
dc.language.iso	en_US	en_US
dc.title	CHARACTERISTICS OF GRADED-LIKE MULTIPLE-DELTA-DOPED GAAS FIELD-EFFECT TRANSISTORS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.113148	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	66	en_US
dc.citation.issue	19	en_US
dc.citation.spage	2505	en_US
dc.citation.epage	2506	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995QX02600019	-
dc.citation.woscount	6	-
Appears in Collections:	Articles