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dc.contributor.authorChen, CCen_US
dc.contributor.authorLin, HCen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorHuang, CCen_US
dc.contributor.authorChien, CHen_US
dc.contributor.authorHuang, TYen_US
dc.contributor.authorLiang, MSen_US
dc.date.accessioned2014-12-08T15:27:02Z-
dc.date.available2014-12-08T15:27:02Z-
dc.date.issued2000en_US
dc.identifier.isbn0-9651577-4-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/19253-
dc.identifier.urihttp://dx.doi.org/10.1109/PPID.2000.870634en_US
dc.description.abstractThe effects of fluorine and nitrogen incorporation on ultra-thin gate oxide integrity (GOI) were investigated by implanting fluorine and nitrogen into poly gate or Si substrate. It is observed that fluorine and nitrogen implantation into Si substrate prior to oxidation can be used to obtain multiple oxide thickness, albeit its effectiveness is drastically reduced for N2O-nitrided oxide. Gate leakage measurements performed on antenna devices show that charging damage can be significantly reduced for fluorine- or nitrogen- implanted devices with O-2 oxide. On the other hand, fluorine-alone implant is useful to reduce the gate leakage of antenna devices with N2O oxide. Finally improved CMOS GOI, even for p-channel devices, is actually achieved for the first time with medium-dose fluorine implantation, without causing noticeably worsened boron penetration.en_US
dc.language.isoen_USen_US
dc.titleImproved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantationen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/PPID.2000.870634en_US
dc.identifier.journal2000 5TH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGEen_US
dc.citation.spage121en_US
dc.citation.epage124en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000166707200034-
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