標題: Enhanced efficiency for c-Si solar cell with nanopillar array via quantum dots layers
作者: Chen, Hsin-Chu
Lin, Chien-Chung
Han, Hao-Wei
Tsai, Yu-Lin
Chang, Chia-Hua
Wang, Hsun-Wen
Tsai, Min-An
Kuo, Hao-Chung
Yu, Peichen
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
公開日期: 12-九月-2011
摘要: The enhanced efficiency of the crystalline silicon (c-Si) solar cell with nanopillar arrays (NPAs) was demonstrated by deployment of CdS quantum dots (QDs). The NPAs was fabricated by the colloidal lithography and reactive-ion etching techniques. Under a simulated one-sun condition, the device with CdS QDs shows a 33% improvement of power conversion efficiency, compared with the one without QDs. For further investigation, the excitation spectrum of photoluminescence (PL), absorbance spectrum, current-voltage (I-V) characteristics, reflectance and external quantum efficiency of the device was measured and analyzed. It is noteworthy that the enhancement of efficiency could be attributed to the photon down-conversion, the antireflection, and the improved electrical property. (C) 2011 Optical Society of America
URI: http://hdl.handle.net/11536/19259
ISSN: 1094-4087
期刊: OPTICS EXPRESS
Volume: 19
Issue: 19
起始頁: A1141
結束頁: A1147
顯示於類別:期刊論文


文件中的檔案:

  1. 000294781200014.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。