Rf loss and cross talk on extremely high resistivity (10K-1M Omega-cm) Si fabricated by ion implantation

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DC 欄位	值	語言
dc.contributor.author	Wu, YH	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Shih, KH	en_US
dc.contributor.author	Wu, CC	en_US
dc.contributor.author	Liao, CP	en_US
dc.contributor.author	Pai, SC	en_US
dc.contributor.author	Chi, CC	en_US
dc.date.accessioned	2014-12-08T15:27:03Z	-
dc.date.available	2014-12-08T15:27:03Z	-
dc.date.issued	2000	en_US
dc.identifier.isbn	0-7803-5687-X	en_US
dc.identifier.issn	0149-645X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19265	-
dc.description.abstract	We have achieved 1.6M Omega -cm resistivity using ion implantation that has little negative effect on MOS devices. Extremely low loss and cross coupling of 6.3 and -79 dB/cm (10 mum gap) at 20GHz are measured with 1 mum Al, respectively, which is due to implant induced trap with similar to 1ps carrier lifetime and stable to 400 degreesC.	en_US
dc.language.iso	en_US	en_US
dc.title	Rf loss and cross talk on extremely high resistivity (10K-1M Omega-cm) Si fabricated by ion implantation	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3	en_US
dc.citation.spage	221	en_US
dc.citation.epage	224	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000166811000050	-
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