Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ker, MD | en_US |
dc.contributor.author | Chen, TY | en_US |
dc.contributor.author | Wu, CY | en_US |
dc.contributor.author | Chang, HH | en_US |
dc.date.accessioned | 2014-12-08T15:27:05Z | - |
dc.date.available | 2014-12-08T15:27:05Z | - |
dc.date.issued | 2000 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/19303 | - |
dc.description.abstract | An on-chip ESD protection design is proposed to solve the ESD protection challenge to the analog pins for high-precision applications. A design model to find the optimized device dimensions and layout spacings on the input ESD clamp devices has been developed to keep the total input capacitance almost constant (within 1% variation), even if the analog signal has an input dynamic range of 1V. The device dimension (W/L) of ESD clamp device connected to the I/O pad in the analog ESD protection circuit can be reduced to only 50/0.5 (mu m/mu m) in a 0.35-mu m silicided CMOS process, but it can sustain the HEM (MM) ESD level of up to 6kV (400V). With such a smaller device dimension, the input capacitance of this analog ESD protection circuit can be significantly reduced to only similar to 1.0 pF (including the bond pad capacitance) for high-frequency applications. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Design and analysis of the on-chip ESD protection circuit with a constant input capacitance for high-precision analog applications | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | ISCAS 2000: IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - PROCEEDINGS, VOL V: EMERGING TECHNOLOGIES FOR THE 21ST CENTURY | en_US |
dc.citation.spage | 61 | en_US |
dc.citation.epage | 64 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000088845800016 | - |
Appears in Collections: | Conferences Paper |