完整後設資料紀錄
DC 欄位語言
dc.contributor.authorKer, MDen_US
dc.contributor.authorChen, TYen_US
dc.contributor.authorWu, CYen_US
dc.contributor.authorChang, HHen_US
dc.date.accessioned2014-12-08T15:27:05Z-
dc.date.available2014-12-08T15:27:05Z-
dc.date.issued2000en_US
dc.identifier.urihttp://hdl.handle.net/11536/19303-
dc.description.abstractAn on-chip ESD protection design is proposed to solve the ESD protection challenge to the analog pins for high-precision applications. A design model to find the optimized device dimensions and layout spacings on the input ESD clamp devices has been developed to keep the total input capacitance almost constant (within 1% variation), even if the analog signal has an input dynamic range of 1V. The device dimension (W/L) of ESD clamp device connected to the I/O pad in the analog ESD protection circuit can be reduced to only 50/0.5 (mu m/mu m) in a 0.35-mu m silicided CMOS process, but it can sustain the HEM (MM) ESD level of up to 6kV (400V). With such a smaller device dimension, the input capacitance of this analog ESD protection circuit can be significantly reduced to only similar to 1.0 pF (including the bond pad capacitance) for high-frequency applications.en_US
dc.language.isoen_USen_US
dc.titleDesign and analysis of the on-chip ESD protection circuit with a constant input capacitance for high-precision analog applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalISCAS 2000: IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - PROCEEDINGS, VOL V: EMERGING TECHNOLOGIES FOR THE 21ST CENTURYen_US
dc.citation.spage61en_US
dc.citation.epage64en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000088845800016-
顯示於類別:會議論文