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dc.contributor.authorChen, Cen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorChou, JWen_US
dc.contributor.authorHuang, CTen_US
dc.contributor.authorLin, KCen_US
dc.contributor.authorCheng, YCen_US
dc.contributor.authorLin, CYen_US
dc.date.accessioned2014-12-08T15:27:07Z-
dc.date.available2014-12-08T15:27:07Z-
dc.date.issued2000en_US
dc.identifier.isbn0-7803-6304-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/19349-
dc.description.abstractExcellent PMOS short channel effect is achieved by using high energy, large tilt angle arsenic implant as P-Halo. For the first time, it was found that the tail profile of P-Halo implant through the polysilicon gate, therefore, the channel concentration is modulated not only laterally from gate edge but also vertically from top of the polysilicon gate and it resulted in very flat short channel behavior. The effect of arsenic P-Halo implant was comprehensively studied and well characterized to explain this specific phenomenon. The gate oxide integrity was examined by Q(BD) and it passed the lifetime of 10 years at different conditions of P-Halo implants. Excellent performance of 0.12um PMOSFET is also demonstrated in this work.en_US
dc.language.isoen_USen_US
dc.titleOptimization of short channel effect by arsenic P-Halo implant through polysilicon gate for 0.12uw P-MOSFETen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2000 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGSen_US
dc.citation.spage44en_US
dc.citation.epage47en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000166961800011-
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