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dc.contributor.authorWU, CYen_US
dc.contributor.authorCHEN, CCen_US
dc.contributor.authorCHO, JJen_US
dc.date.accessioned2014-12-08T15:03:24Z-
dc.date.available2014-12-08T15:03:24Z-
dc.date.issued1995-05-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://dx.doi.org/10.1109/4.384165en_US
dc.identifier.urihttp://hdl.handle.net/11536/1938-
dc.description.abstractFully-differential current-mode circuit techniques are developed for the design of a pipelined current-mode analog-to-digital converter (IADC) in the standard CMOS digital processes. In the proposed IADC, the 1-b-per-stage architecture based on the reference nonrestoring algorithm is adopted. Thus large component ratios can be avoided and the linearity errors caused by device mismatches can be minimized. As one of the key subcircuits in the IADC, an offset-canceled high speed differential current comparator (CCMP) is proposed and analyzed. In the CCMP, the subtractions of offsets are performed in the current domain without floating capacitors. Moreover, the other key subcircuit, the current sample-and-hold amplifier (CSHA), is also developed to realize the pipeline architecture. An experimental chip for the proposed IADC has been fabricated in 0.8-mu m n-well CMOS technology. Using a single 5-V power supply, the fabricated IADC can be operated at 4,5-Ms/s conversion rate with a signal-to-noise-and-distortion-ratio (SNDR) of 51 dB (effective 8.2-b) for the input signal at 453 kHz. For 8-b resolution, the fabricated IADC can be operated at 4,5-Ms/s conversion rate with both differential nonlinearity (DNL) and integral nonlinearity (INL) below +/-0.6 LSB. The power consumption and the active chip area are 16 mW/b and 0.73 mm(2)/b, respectively.en_US
dc.language.isoen_USen_US
dc.titleA CMOS TRANSISTOR-ONLY 8-B 4.5-MS/S PIPELINED ANALOG-TO-DIGITAL CONVERTER USING FULLY-DIFFERENTIAL CURRENT-MODE CIRCUIT TECHNIQUESen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/4.384165en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume30en_US
dc.citation.issue5en_US
dc.citation.spage522en_US
dc.citation.epage532en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995QV83200002-
dc.citation.woscount17-
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