標題: | Breakdown characteristics of ultra-thin gate oxides caused by plasma charging |
作者: | Chen, CC Lin, HC Chang, CY Chien, CH Huang, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1999 |
摘要: | Breakdown characteristics of ultra-thin gate oxides caused by plasma charging were studied in this work. It is observed that as oxide thickness is scaled down to 4 nn, some traditional monitor parameters may lose their sensitivity for detecting oxide degradation induced by plasma charging damage, due to insignificant trap generation. Even the gate leakage current, although sensitive for 4 nm oxide, may no longer be sensitive enough for even thinner oxide (e.g., 2.6 nm), due to the existence of large tunneling current. Moreover, several soft-breakdown events were found to occur in ultrathin oxide before the final onset of a catastrophic hard-breakdown. Finally, an equivalent local oxide thickness is calculated using local oxide thinning model to estimate the stepwise increase of gate current after soft-breakdown event. |
URI: | http://hdl.handle.net/11536/19393 |
ISBN: | 1-55899-474-2 |
ISSN: | 0272-9172 |
期刊: | ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS |
Volume: | 567 |
起始頁: | 313 |
結束頁: | 319 |
顯示於類別: | 會議論文 |