Highly reliable liquid-phase deposited SiO2 with nitrous oxide plasma post-treatment for low temperature processed poly-Si TFT's

Abstract

Low temperature (similar to 300 degrees C) N2O plasma annealing for liquid-phase deposited (LPD) gate oxide has been proposed for the first time. Physicochemical and electrical characterizations show that the N2O-treated LPD-SiO2 improves breakdown field, interface state density, and Si-rich phenomenon. This novel technology has been also successfully applied to LTP poly-Si TFT's, which reveal excellent characteristics and reliability. It is believed that the N2O plasma post-treatment not only improves the oxide quality, but also passivates the trap states in poly-Si channel.