標題: Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFET
作者: Wang, TH
Hsu, CF
Chiang, LP
Zous, NK
Chao, TS
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1998
摘要: Drain leakage current degradation at zero V-gs in a hot carrier stressed n-MOSFET is measured and modeled. The dependences of drain leakage current on supply voltage and temperature are characterized. In modeling, various drain leakage current mechanisms including drain-to-source subthreshold leakage current, band-to-band tunneling current and interface trap assisted leakage current are taken into account. Our result shows that interface trap induced leakage current appears to be a dominant drain leakage mechanism as the supply voltage is scaled below 3.0V. Drain leakage current degradation by orders of magnitude has been observed due to hot carrier stress.
URI: http://hdl.handle.net/11536/19496
http://dx.doi.org/10.1109/RELPHY.1998.670552
ISBN: 0-7803-4400-6
DOI: 10.1109/RELPHY.1998.670552
期刊: 1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL
起始頁: 209
結束頁: 213
Appears in Collections:Conferences Paper


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