完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, TH | en_US |
dc.contributor.author | Hsu, CF | en_US |
dc.contributor.author | Chiang, LP | en_US |
dc.contributor.author | Zous, NK | en_US |
dc.contributor.author | Chao, TS | en_US |
dc.contributor.author | Chang, CY | en_US |
dc.date.accessioned | 2014-12-08T15:27:15Z | - |
dc.date.available | 2014-12-08T15:27:15Z | - |
dc.date.issued | 1998 | en_US |
dc.identifier.isbn | 0-7803-4400-6 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/19496 | - |
dc.identifier.uri | http://dx.doi.org/10.1109/RELPHY.1998.670552 | en_US |
dc.description.abstract | Drain leakage current degradation at zero V-gs in a hot carrier stressed n-MOSFET is measured and modeled. The dependences of drain leakage current on supply voltage and temperature are characterized. In modeling, various drain leakage current mechanisms including drain-to-source subthreshold leakage current, band-to-band tunneling current and interface trap assisted leakage current are taken into account. Our result shows that interface trap induced leakage current appears to be a dominant drain leakage mechanism as the supply voltage is scaled below 3.0V. Drain leakage current degradation by orders of magnitude has been observed due to hot carrier stress. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFET | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1109/RELPHY.1998.670552 | en_US |
dc.identifier.journal | 1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL | en_US |
dc.citation.spage | 209 | en_US |
dc.citation.epage | 213 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000073835800033 | - |
顯示於類別: | 會議論文 |