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dc.contributor.authorChung, SSen_US
dc.contributor.authorKuo, SNen_US
dc.contributor.authorYih, CMen_US
dc.contributor.authorChao, TSen_US
dc.date.accessioned2014-12-08T15:27:23Z-
dc.date.available2014-12-08T15:27:23Z-
dc.date.issued1997en_US
dc.identifier.isbn0-7803-4101-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/19632-
dc.identifier.urihttp://dx.doi.org/10.1109/IEDM.1997.650385en_US
dc.description.abstractIn this paper, a complete study of the cell reliability based an a unique oxide damage characterization for two different programming schemes of p-channel flash cell will be presented These two programming schemes are Channel Hot Electron (CHE) injection or Band-to-Band (BTB) tunneling induced hot electron injection. Degradation of memory cells after P/E cycles due to the above oxide damages has been identified. It was found that both N-it and Q(ox) will dominate the device degradation during programming. Although p-flash cell has high speed performance by comparing with n-flash cell, extra efforts are needed for designing reliable p-channel flash cell by appropriate drain engineering or related device optimization.en_US
dc.language.isoen_USen_US
dc.titlePerformance and reliability evaluations of P-channel flash memories with different programming schemesen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/IEDM.1997.650385en_US
dc.identifier.journalINTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGESTen_US
dc.citation.spage295en_US
dc.citation.epage298en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000072059200067-
Appears in Collections:Conferences Paper


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