Performance and reliability evaluations of P-channel flash memories with different programming schemes

doi:10.1109/IEDM.1997.650385

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DC 欄位	值	語言
dc.contributor.author	Chung, SS	en_US
dc.contributor.author	Kuo, SN	en_US
dc.contributor.author	Yih, CM	en_US
dc.contributor.author	Chao, TS	en_US
dc.date.accessioned	2014-12-08T15:27:23Z	-
dc.date.available	2014-12-08T15:27:23Z	-
dc.date.issued	1997	en_US
dc.identifier.isbn	0-7803-4101-5	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19632	-
dc.identifier.uri	http://dx.doi.org/10.1109/IEDM.1997.650385	en_US
dc.description.abstract	In this paper, a complete study of the cell reliability based an a unique oxide damage characterization for two different programming schemes of p-channel flash cell will be presented These two programming schemes are Channel Hot Electron (CHE) injection or Band-to-Band (BTB) tunneling induced hot electron injection. Degradation of memory cells after P/E cycles due to the above oxide damages has been identified. It was found that both N-it and Q(ox) will dominate the device degradation during programming. Although p-flash cell has high speed performance by comparing with n-flash cell, extra efforts are needed for designing reliable p-channel flash cell by appropriate drain engineering or related device optimization.	en_US
dc.language.iso	en_US	en_US
dc.title	Performance and reliability evaluations of P-channel flash memories with different programming schemes	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/IEDM.1997.650385	en_US
dc.identifier.journal	INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST	en_US
dc.citation.spage	295	en_US
dc.citation.epage	298	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000072059200067	-
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