High Performance Ir/TiPrO/TaN MIM Capacitors for Analog ICs Application

Abstract

In this paper, we demonstrate high quality material TiPrO and high density Ti(x)Pr(1-x)O (x similar to 0.67) metal-insulator-metal (MIM) capacitors using high work function (similar to 5.3 eV) Ir top electrode. Very low leakage current of 7x10(-9) A/cm(2) at -1 V and high 16 fF/mu m(2) capacitance density are achieved for 400 degrees C anneal TiPrO, which also meets the ITRS goals (at year 2018) of 10 fF/mu m(2) density and J/(C.V) <7 fA/(pF.V). Furthermore, the improved high 20 fF/mu m(2) capacitance density TiPrO MIM is obtained at higher annealing temperature, where low leakage current 1.2x10(-7) A/cm(2) is measured at -1 V. These good performances indicate TiPrO MIM is suitable for analog/RF ICs Applications.