完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lee, J-H. | en_US |
dc.contributor.author | Huang, S-C. | en_US |
dc.contributor.author | Wu, Y. -H. | en_US |
dc.contributor.author | Chen, K. -H. | en_US |
dc.date.accessioned | 2014-12-08T15:27:27Z | - |
dc.date.available | 2014-12-08T15:27:27Z | - |
dc.date.issued | 2011-09-01 | en_US |
dc.identifier.issn | 0013-5194 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1049/el.2011.1904 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/19714 | - |
dc.description.abstract | A mutual-protection scheme is proposed to achieve an ultra-low capacitance electrostatic discharge (ESD) protection device. The ESD protection device can not only dissipate ESD current, but also can make the vulnerable output transistor have the ESD protection capability. Namely, the output transistor can also protect ICs and help the ESD protection device to share the ESD current. Using this scheme can discharge more ESD current than the summation current of the two individual devices. From the ESD test result, it can achieve the required ESD level by using the ultra-low capacitance ESD protection device (similar to 1.2 fF). | en_US |
dc.language.iso | en_US | en_US |
dc.title | 1 fF ESD protection device for gigahertz high-frequency output ESD protection | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1049/el.2011.1904 | en_US |
dc.identifier.journal | ELECTRONICS LETTERS | en_US |
dc.citation.volume | 47 | en_US |
dc.citation.issue | 18 | en_US |
dc.citation.spage | 1021 | en_US |
dc.citation.epage | U1554 | en_US |
dc.contributor.department | 電控工程研究所 | zh_TW |
dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
dc.identifier.wosnumber | WOS:000294457600011 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |