Semiself-Protection Scheme for Gigahertz High-Frequency Output ESD Protection

標題:	Semiself-Protection Scheme for Gigahertz High-Frequency Output ESD Protection
作者:	Lee, Jian-Hsing Huang, Shao-Chang Su, Hung-Der Chen, Ke-Horng 電控工程研究所 Institute of Electrical and Control Engineering
關鍵字:	Electrostatic discharge (ESD);radio frequency;silicon-controlled rectifier (SCR)
公開日期:	1-七月-2011
摘要:	In this paper, a semiself-protection scheme is proposed and developed for gigahertz output electrostatic-discharge (ESD) protection. The output transistor acts as a trigger device to trigger the ESD protection device, and then, it is turned off when the ESD protection device turns on. Thus, the capacitance of a gigahertz high-frequency output pad can be minimized because this scheme is without any additional trigger device or any passive component.
URI:	http://dx.doi.org/10.1109/TED.2011.2143717 http://hdl.handle.net/11536/22034
ISSN:	0018-9383
DOI:	10.1109/TED.2011.2143717
期刊:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume:	58
Issue:	7
起始頁:	1914
結束頁:	1921
顯示於類別：	期刊論文

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