Semiself-Protection Scheme for Gigahertz High-Frequency Output ESD Protection

doi:10.1109/TED.2011.2143717

Full metadata record

DC Field	Value	Language
dc.contributor.author	Lee, Jian-Hsing	en_US
dc.contributor.author	Huang, Shao-Chang	en_US
dc.contributor.author	Su, Hung-Der	en_US
dc.contributor.author	Chen, Ke-Horng	en_US
dc.date.accessioned	2014-12-08T15:30:52Z	-
dc.date.available	2014-12-08T15:30:52Z	-
dc.date.issued	2011-07-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/TED.2011.2143717	en_US
dc.identifier.uri	http://hdl.handle.net/11536/22034	-
dc.description.abstract	In this paper, a semiself-protection scheme is proposed and developed for gigahertz output electrostatic-discharge (ESD) protection. The output transistor acts as a trigger device to trigger the ESD protection device, and then, it is turned off when the ESD protection device turns on. Thus, the capacitance of a gigahertz high-frequency output pad can be minimized because this scheme is without any additional trigger device or any passive component.	en_US
dc.language.iso	en_US	en_US
dc.subject	Electrostatic discharge (ESD)	en_US
dc.subject	radio frequency	en_US
dc.subject	silicon-controlled rectifier (SCR)	en_US
dc.title	Semiself-Protection Scheme for Gigahertz High-Frequency Output ESD Protection	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/TED.2011.2143717	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	58	en_US
dc.citation.issue	7	en_US
dc.citation.spage	1914	en_US
dc.citation.epage	1921	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:000291952900013	-
dc.citation.woscount	2	-
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