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dc.contributor.authorLee, J-H.en_US
dc.contributor.authorHuang, S-C.en_US
dc.contributor.authorWu, Y. -H.en_US
dc.contributor.authorChen, K. -H.en_US
dc.date.accessioned2014-12-08T15:27:27Z-
dc.date.available2014-12-08T15:27:27Z-
dc.date.issued2011-09-01en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el.2011.1904en_US
dc.identifier.urihttp://hdl.handle.net/11536/19714-
dc.description.abstractA mutual-protection scheme is proposed to achieve an ultra-low capacitance electrostatic discharge (ESD) protection device. The ESD protection device can not only dissipate ESD current, but also can make the vulnerable output transistor have the ESD protection capability. Namely, the output transistor can also protect ICs and help the ESD protection device to share the ESD current. Using this scheme can discharge more ESD current than the summation current of the two individual devices. From the ESD test result, it can achieve the required ESD level by using the ultra-low capacitance ESD protection device (similar to 1.2 fF).en_US
dc.language.isoen_USen_US
dc.title1 fF ESD protection device for gigahertz high-frequency output ESD protectionen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el.2011.1904en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume47en_US
dc.citation.issue18en_US
dc.citation.spage1021en_US
dc.citation.epageU1554en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:000294457600011-
dc.citation.woscount1-
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