THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS

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DC Field	Value	Language
dc.contributor.author	LIN, YH	en_US
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.contributor.author	CHAO, TS	en_US
dc.date.accessioned	2014-12-08T15:03:26Z	-
dc.date.available	2014-12-08T15:03:26Z	-
dc.date.issued	1995-05-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.382227	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1971	-
dc.description.abstract	A method of using a thin oxide on the top of the poly-Si gate to getter fluorine for BF2+ in pMOS is proposed and demonstrated. Due to less amount of fluorine in the poly-Si as well as in the gate oxide, the boron penetration through the gate oxide is suppressed. The MOS capacitors fabricated by using this method show less shifts and distortion on C-V curves and better electrical characteristics.	en_US
dc.language.iso	en_US	en_US
dc.title	THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.382227	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	16	en_US
dc.citation.issue	5	en_US
dc.citation.spage	164	en_US
dc.citation.epage	165	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995QW57100003	-
dc.citation.woscount	5	-
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