NITRIDATION OF THE STACKED POLY-SI GATE TO SUPPRESS THE BORON PENETRATION IN PMOS

標題:	NITRIDATION OF THE STACKED POLY-SI GATE TO SUPPRESS THE BORON PENETRATION IN PMOS
作者:	LIN, YH LAI, SC LEE, CL LEI, TF CHAO, TS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-六月-1995
摘要:	Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF (+)(2)-implantation is proposed and demonstrated, The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.
URI:	http://dx.doi.org/10.1109/55.790724 http://hdl.handle.net/11536/1904
ISSN:	0741-3106
DOI:	10.1109/55.790724
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	16
Issue:	6
起始頁:	248
結束頁:	249
顯示於類別：	期刊論文

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