THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS

標題:	THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS
作者:	LIN, YH LEE, CL LEI, TF CHAO, TS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-五月-1995
摘要:	A method of using a thin oxide on the top of the poly-Si gate to getter fluorine for BF2+ in pMOS is proposed and demonstrated. Due to less amount of fluorine in the poly-Si as well as in the gate oxide, the boron penetration through the gate oxide is suppressed. The MOS capacitors fabricated by using this method show less shifts and distortion on C-V curves and better electrical characteristics.
URI:	http://dx.doi.org/10.1109/55.382227 http://hdl.handle.net/11536/1971
ISSN:	0741-3106
DOI:	10.1109/55.382227
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	16
Issue:	5
起始頁:	164
結束頁:	165
顯示於類別：	期刊論文

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