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dc.contributor.authorHuang, C. C.en_US
dc.contributor.authorCheng, C. H.en_US
dc.contributor.authorChin, Alberten_US
dc.contributor.authorChou, C. P.en_US
dc.date.accessioned2014-12-08T15:01:19Z-
dc.date.available2014-12-08T15:01:19Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-56677-651-6en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://hdl.handle.net/11536/197-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2981616en_US
dc.description.abstractIn this paper, we demonstrate high quality material TiPrO and high density Ti(x)Pr(1-x)O (x similar to 0.67) metal-insulator-metal (MIM) capacitors using high work function (similar to 5.3 eV) Ir top electrode. Very low leakage current of 7x10(-9) A/cm(2) at -1 V and high 16 fF/mu m(2) capacitance density are achieved for 400 degrees C anneal TiPrO, which also meets the ITRS goals (at year 2018) of 10 fF/mu m(2) density and J/(C.V) <7 fA/(pF.V). Furthermore, the improved high 20 fF/mu m(2) capacitance density TiPrO MIM is obtained at higher annealing temperature, where low leakage current 1.2x10(-7) A/cm(2) is measured at -1 V. These good performances indicate TiPrO MIM is suitable for analog/RF ICs Applications.en_US
dc.language.isoen_USen_US
dc.titleHigh Performance Ir/TiPrO/TaN MIM Capacitors for Analog ICs Applicationen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/1.2981616en_US
dc.identifier.journalPHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6en_US
dc.citation.volume16en_US
dc.citation.issue5en_US
dc.citation.spage341en_US
dc.citation.epage352en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000272592200035-
Appears in Collections:Conferences Paper


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