標題: Polycrystalline beta-SiC film growth on Si by ECR-CVD at 178-500 degrees C
作者: Cheng, KL
Liu, CC
Fu, CM
Cheng, HC
Lee, C
Yew, TR
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1996
URI: http://hdl.handle.net/11536/19826
ISBN: 1-55899-306-1
ISSN: 0272-9172
期刊: POLYCRYSTALLINE THIN FILMS: STRUCTURE, TEXTURE, PROPERTIES, AND APPLICATIONS II
Volume: 403
起始頁: 271
結束頁: 275
顯示於類別:會議論文