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dc.contributor.authorYen, STen_US
dc.contributor.authorLin, Gen_US
dc.contributor.authorLiu, DCen_US
dc.contributor.authorTsai, CMen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:27:36Z-
dc.date.available2014-12-08T15:27:36Z-
dc.date.issued1996en_US
dc.identifier.isbn0-7803-3163-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/19851-
dc.language.isoen_USen_US
dc.title980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergenceen_US
dc.typeProceedings Paperen_US
dc.identifier.journal15TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE - CONFERENCE DIGESTen_US
dc.citation.spage13en_US
dc.citation.epage14en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996BG45C00006-
Appears in Collections:Conferences Paper