980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yen, ST	en_US
dc.contributor.author	Lin, G	en_US
dc.contributor.author	Liu, DC	en_US
dc.contributor.author	Tsai, CM	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:27:36Z	-
dc.date.available	2014-12-08T15:27:36Z	-
dc.date.issued	1996	en_US
dc.identifier.isbn	0-7803-3163-X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19851	-
dc.language.iso	en_US	en_US
dc.title	980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	15TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE - CONFERENCE DIGEST	en_US
dc.citation.spage	13	en_US
dc.citation.epage	14	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1996BG45C00006	-
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