| 標題: | Field enhanced oxide charge detrapping in n-MOSFET's |
| 作者: | Wang, TH Chang, TE Chiang, LP Huang, C 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公開日期: | 1996 |
| URI: | http://hdl.handle.net/11536/19865 |
| ISBN: | 0-7803-2754-3 |
| 期刊: | 1996 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 34TH ANNUAL |
| 起始頁: | 122 |
| 結束頁: | 125 |
| Appears in Collections: | Conferences Paper |
- Investigation of oxide charge trapping and detrapping in a n-MOSFET / Wang, TH;Chang, TE;Chiang, LP;Zous, NK;Huang, C
- Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique / Wang, TH;Chang, TE;Chiang, LP;Wang, CH;Zous, NK
- Characterization of various stress-induced oxide traps in MOSFET's by using a subthreshold transient current technique / Wang, TH;Chiang, LP;Zous, NK;Chang, TE;Huang, C
- 深次微米元件中熱載子效應所引發之氧化層可靠度 / 蔣汝平;Lu-Ping Chiang;汪大暉;Tahui Wang
- A new technique to extract oxide trap time constants in MOSFET's / Wang, TH;Chang, TE;Chiang, LP;Huang, C
- Mechanisms and characteristics of oxide charge detrapping in n-MOSFET's / Wang, TH;Chang, TE;Chiang, LP;Huang, CM;Guo, JC
Loading...