Field enhanced oxide charge detrapping in n-MOSFET's

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wang, TH	en_US
dc.contributor.author	Chang, TE	en_US
dc.contributor.author	Chiang, LP	en_US
dc.contributor.author	Huang, C	en_US
dc.date.accessioned	2014-12-08T15:27:37Z	-
dc.date.available	2014-12-08T15:27:37Z	-
dc.date.issued	1996	en_US
dc.identifier.isbn	0-7803-2754-3	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19865	-
dc.language.iso	en_US	en_US
dc.title	Field enhanced oxide charge detrapping in n-MOSFET's	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	1996 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 34TH ANNUAL	en_US
dc.citation.spage	122	en_US
dc.citation.epage	125	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1996BF52J00020	-
顯示於類別：	會議論文