標題: Field enhanced oxide charge detrapping in n-MOSFET's
作者: Wang, TH
Chang, TE
Chiang, LP
Huang, C
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1996
URI: http://hdl.handle.net/11536/19865
ISBN: 0-7803-2754-3
期刊: 1996 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 34TH ANNUAL
起始頁: 122
結束頁: 125
顯示於類別:會議論文