標題: Fabrication and characterization of various carbon-clad silicon microtips with ultra-small tip radii.
作者: Ku, TK
Chen, SH
Yang, CD
She, NJ
Tarntair, FG
Wang, CC
Chen, CF
Hsieh, IJ
Cheng, HC
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
公開日期: 1996
摘要: In order to take the advantages of diamond and carbon coating on flat-panel display, unscratched sharp Si microtip arrays have been carburized based on the bias enhanced nucleation (BEN) and low-pressure MPCVD deposition to obtain an ultra-sharp carburized Si FEAs. The tip radii of these BEN-carburized Si tips can be reduced below 300 Angstrom under low deposition temperature (<550 degrees C). Furthermore, some BEN-carburized samples were further deposited by normal diamond growth conditions to form the ultra-sharp DLC-clad Si FEAs with enhanced emission ability.
URI: http://hdl.handle.net/11536/19902
ISBN: 0-7803-3594-5
期刊: IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST
起始頁: 329
結束頁: 333
Appears in Collections:Conferences Paper