MICROCRYSTALLINE beta-SIC GROWTH ON SI BY ECR-CVD AT 500 degrees C

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHENG, KL	en_US
dc.contributor.author	LIU, CC	en_US
dc.contributor.author	CHENG, HC	en_US
dc.contributor.author	LEE, CY	en_US
dc.contributor.author	YEW, TR	en_US
dc.date.accessioned	2014-12-08T15:27:43Z	-
dc.date.available	2014-12-08T15:27:43Z	-
dc.date.issued	1995	en_US
dc.identifier.isbn	1-55899-259-6	en_US
dc.identifier.issn	0272-9172	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19967	-
dc.language.iso	en_US	en_US
dc.title	MICROCRYSTALLINE beta-SIC GROWTH ON SI BY ECR-CVD AT 500 degrees C	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS	en_US
dc.citation.volume	358	en_US
dc.citation.spage	799	en_US
dc.citation.epage	803	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995BC88M00122	-
顯示於類別：	會議論文