Fabrication and characterization of gated Si field emitter arrays with gate aperture below 0.5 mu m

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Ku, TK	en_US
dc.contributor.author	Hsieh, BB	en_US
dc.contributor.author	Chen, MS	en_US
dc.contributor.author	Wang, CC	en_US
dc.contributor.author	Wang, PW	en_US
dc.contributor.author	Hsieh, IJ	en_US
dc.contributor.author	Cheng, HC	en_US
dc.date.accessioned	2014-12-08T15:27:43Z	-
dc.date.available	2014-12-08T15:27:43Z	-
dc.date.issued	1995	en_US
dc.identifier.isbn	0-8194-2007-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19968	-
dc.identifier.uri	http://dx.doi.org/10.1117/12.220935	en_US
dc.language.iso	en_US	en_US
dc.subject	oxidation sharpening	en_US
dc.subject	microtips	en_US
dc.subject	gated field emitter arrays	en_US
dc.subject	silicon pedestal	en_US
dc.subject	gate aperture	en_US
dc.subject	field emission	en_US
dc.title	Fabrication and characterization of gated Si field emitter arrays with gate aperture below 0.5 mu m	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1117/12.220935	en_US
dc.identifier.journal	MICROELECTRONIC STRUCTURES AND MICROELECTROMECHANICAL DEVICES FOR OPTICAL PROCESSING AND MULTIMEDIA APPLICATIONS	en_US
dc.citation.volume	2641	en_US
dc.citation.spage	140	en_US
dc.citation.epage	144	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995BE29Y00016	-
顯示於類別：	會議論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。