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dc.contributor.authorKu, TKen_US
dc.contributor.authorHsieh, BBen_US
dc.contributor.authorChen, MSen_US
dc.contributor.authorWang, CCen_US
dc.contributor.authorWang, PWen_US
dc.contributor.authorHsieh, IJen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:27:43Z-
dc.date.available2014-12-08T15:27:43Z-
dc.date.issued1995en_US
dc.identifier.isbn0-8194-2007-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/19968-
dc.identifier.urihttp://dx.doi.org/10.1117/12.220935en_US
dc.language.isoen_USen_US
dc.subjectoxidation sharpeningen_US
dc.subjectmicrotipsen_US
dc.subjectgated field emitter arraysen_US
dc.subjectsilicon pedestalen_US
dc.subjectgate apertureen_US
dc.subjectfield emissionen_US
dc.titleFabrication and characterization of gated Si field emitter arrays with gate aperture below 0.5 mu men_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.220935en_US
dc.identifier.journalMICROELECTRONIC STRUCTURES AND MICROELECTROMECHANICAL DEVICES FOR OPTICAL PROCESSING AND MULTIMEDIA APPLICATIONSen_US
dc.citation.volume2641en_US
dc.citation.spage140en_US
dc.citation.epage144en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995BE29Y00016-
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