Fabrication and characterization of the Pd-silicided emitters for field-emission devices

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wang, CC	en_US
dc.contributor.author	Ku, TK	en_US
dc.contributor.author	Feng, MS	en_US
dc.contributor.author	Hsieh, IJ	en_US
dc.contributor.author	Cheng, HC	en_US
dc.date.accessioned	2014-12-08T15:27:43Z	-
dc.date.available	2014-12-08T15:27:43Z	-
dc.date.issued	1995	en_US
dc.identifier.isbn	0-8194-2007-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19969	-
dc.identifier.uri	http://dx.doi.org/10.1117/12.220936	en_US
dc.language.iso	en_US	en_US
dc.subject	Pd silicided	en_US
dc.subject	field emitter	en_US
dc.subject	micromachining	en_US
dc.subject	sharpening	en_US
dc.subject	annealing	en_US
dc.subject	TEM	en_US
dc.subject	AES	en_US
dc.title	Fabrication and characterization of the Pd-silicided emitters for field-emission devices	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1117/12.220936	en_US
dc.identifier.journal	MICROELECTRONIC STRUCTURES AND MICROELECTROMECHANICAL DEVICES FOR OPTICAL PROCESSING AND MULTIMEDIA APPLICATIONS	en_US
dc.citation.volume	2641	en_US
dc.citation.spage	145	en_US
dc.citation.epage	152	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995BE29Y00017	-
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