Novel low-stress SiO2-F-x(x) film deposited by room-temperature liquid-phase deposition method

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DC Field	Value	Language
dc.contributor.author	Yeh, CF	en_US
dc.contributor.author	Lin, SS	en_US
dc.date.accessioned	2014-12-08T15:27:43Z	-
dc.date.available	2014-12-08T15:27:43Z	-
dc.date.issued	1995	en_US
dc.identifier.isbn	0-8194-2005-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19970	-
dc.identifier.uri	http://dx.doi.org/10.1117/12.221287	en_US
dc.language.iso	en_US	en_US
dc.subject	low-stress	en_US
dc.subject	liquid phase deposition	en_US
dc.subject	SiO2-F-x(x)	en_US
dc.title	Novel low-stress SiO2-F-x(x) film deposited by room-temperature liquid-phase deposition method	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1117/12.221287	en_US
dc.identifier.journal	MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY	en_US
dc.citation.volume	2639	en_US
dc.citation.spage	294	en_US
dc.citation.epage	303	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995BE29X00033	-
Appears in Collections:	Conferences Paper

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