| 標題: | Properties of metalorganic chemical vapor deposited tantalum nitride thin films |
| 作者: | Sun, SC Tsai, MH Tsai, CE Chiu, HT 奈米中心 Nano Facility Center |
| 公開日期: | 1995 |
| URI: | http://hdl.handle.net/11536/20000 |
| ISBN: | 7-5053-3285-6 |
| 期刊: | PROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY |
| 起始頁: | A547 |
| 結束頁: | A549 |
| Appears in Collections: | Conferences Paper |
- METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION / TSAI, MH;SUN, SC;CHIU, HT;TSAI, CE;CHUANG, SH
- METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION / TSAI, MH;SUN, SC;CHIU, HT;TSAI, CE;CHUANG, SH
- Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications / Tsai, MH;Sun, SC;Lee, CP;Chiu, HT;Tsai, CE
- Metallo-organic chemical vapor deposition of tantalum carbide and tantalum nitride thin films from (BuCH)-Bu-t=Ta(CH2 Bu-t)(3) and (BuN)-Bu-t=Ta(CH2 Bu-t)(3). / Chiu, HT;Chang, YH;Chang, PJ;Wu, JB;Peng, SM
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