標題: Accurate MOS device hot carrier models for VLSI reliability simulation
作者: CHUNG, SS
YANG, JJ
SU, JS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1995
URI: http://hdl.handle.net/11536/20003
http://dx.doi.org/10.1109/CICC.1995.518175
ISBN: 0-7803-2585-0
DOI: 10.1109/CICC.1995.518175
期刊: PROCEEDINGS OF THE IEEE 1995 CUSTOM INTEGRATED CIRCUITS CONFERENCE
起始頁: 233
結束頁: 236
Appears in Collections:Conferences Paper


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