Gate oxynitride grown in N2O and annealed in no using rapid thermal processing

標題:	Gate oxynitride grown in N2O and annealed in no using rapid thermal processing
作者:	Sun, SC Chen, CH Lou, JC Yen, LW Lin, CJ 電機學院 College of Electrical and Computer Engineering
公開日期:	1995
URI:	http://hdl.handle.net/11536/20005
ISBN:	1-55899-290-1
ISSN:	0272-9172
期刊:	RAPID THERMAL AND INTEGRATED PROCESSING IV
Volume:	387
起始頁:	241
結束頁:	246
顯示於類別：	會議論文