Rapid thermal chemical vapor deposition of nitrogen-doped polysilicon for high-performance and high-reliability CMOS technology

Full metadata record

DC Field	Value	Language
dc.contributor.author	Sun, SC	en_US
dc.contributor.author	Wang, LS	en_US
dc.contributor.author	Yeh, FL	en_US
dc.date.accessioned	2014-12-08T15:27:45Z	-
dc.date.available	2014-12-08T15:27:45Z	-
dc.date.issued	1995	en_US
dc.identifier.isbn	1-55899-290-1	en_US
dc.identifier.issn	0272-9172	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20006	-
dc.language.iso	en_US	en_US
dc.title	Rapid thermal chemical vapor deposition of nitrogen-doped polysilicon for high-performance and high-reliability CMOS technology	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	RAPID THERMAL AND INTEGRATED PROCESSING IV	en_US
dc.citation.volume	387	en_US
dc.citation.spage	329	en_US
dc.citation.epage	334	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:A1995BE31M00040	-
Appears in Collections:	Conferences Paper