REACTIVE ION ETCH OF GAAS AND ALGAAS USING BCL3, SICL4 AND SF6, INSTEAD OF CCL2F2

Full metadata record

DC Field	Value	Language
dc.contributor.author	WU, JW	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	LIN, KC	en_US
dc.contributor.author	CHANG, EY	en_US
dc.contributor.author	HWANG, JH	en_US
dc.date.accessioned	2014-12-08T15:27:51Z	-
dc.date.available	2014-12-08T15:27:51Z	-
dc.date.issued	1994	en_US
dc.identifier.isbn	1-55899-244-8	en_US
dc.identifier.issn	0272-9172	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20111	-
dc.language.iso	en_US	en_US
dc.title	REACTIVE ION ETCH OF GAAS AND ALGAAS USING BCL3, SICL4 AND SF6, INSTEAD OF CCL2F2	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	MATERIALS AND PROCESSES FOR ENVIRONMENTAL PROTECTION	en_US
dc.citation.volume	344	en_US
dc.citation.spage	295	en_US
dc.citation.epage	299	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1994BC30J00041	-
Appears in Collections:	Conferences Paper