CHARACTERIZATION OF A HIGH-QUALITY AND UV-TRANSPARENT PECVD SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATIONS

標題:	CHARACTERIZATION OF A HIGH-QUALITY AND UV-TRANSPARENT PECVD SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATIONS
作者:	WANG, CK YING, TL WEI, CS LIU, LM CHENG, HC LIN, MS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	PE-SIN;UV-TRANSMITTANCE;EPROM
公開日期:	1994
URI:	http://hdl.handle.net/11536/20116 http://dx.doi.org/10.1117/12.186067
ISBN:	0-8194-1668-1
DOI:	10.1117/12.186067
期刊:	MICROELECTRONICS TECHNOLOGY AND PROCESS INTEGRATION
Volume:	2335
起始頁:	282
結束頁:	290
Appears in Collections:	Conferences Paper

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.