RAPID THERMAL-OXIDATION OF LIGHTLY DOPED SILICON IN N2O

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	SUN, SC	en_US
dc.contributor.author	WANG, LS	en_US
dc.contributor.author	YEH, FL	en_US
dc.contributor.author	LAI, TS	en_US
dc.contributor.author	LIN, YH	en_US
dc.date.accessioned	2014-12-08T15:27:53Z	-
dc.date.available	2014-12-08T15:27:53Z	-
dc.date.issued	1994	en_US
dc.identifier.isbn	1-55899-242-1	en_US
dc.identifier.issn	0272-9172	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20140	-
dc.language.iso	en_US	en_US
dc.title	RAPID THERMAL-OXIDATION OF LIGHTLY DOPED SILICON IN N2O	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	RAPID THERMAL AND INTEGRATED PROCESSING III	en_US
dc.citation.volume	342	en_US
dc.citation.spage	181	en_US
dc.citation.epage	186	en_US
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Nano Facility Center	en_US
dc.identifier.wosnumber	WOS:A1994BB24P00025	-
顯示於類別：	會議論文