| 標題: | Al2O3 films formed by anodic oxidation of Al-1wt.%Si-0.5wt%Cu films |
| 作者: | CHIU, S CHANG, PH TUNG, CH 材料科學與工程學系 Department of Materials Science and Engineering |
| 公開日期: | 1994 |
| URI: | http://hdl.handle.net/11536/20150 |
| ISBN: | 3-88355-199-6 |
| 期刊: | THIN FILMS: PROCEEDINGS OF THE JOINT 4TH INTERNATIONAL SYMPOSIUM ON TRENDS AND NEW APPLICATIONS IN THIN FILMS - TATF '94 AND THE 11TH CONFERENCE ON HIGH VACUUM, INTERFACES AND THIN FILMS - HVITF '94 |
| 起始頁: | 662 |
| 結束頁: | 665 |
| 顯示於類別： | 會議論文 |
- 陽極氧化鋁薄膜之特性研究 / 邱瑞隆;Chiu ,Re-Long;張秉衡;Peeng-Heng Chang
- THE EFFECT OF ANODIZING TEMPERATURE ON ANODIC OXIDE FORMED ON PURE AL THIN-FILMS / CHIU, RL;CHANG, PH;TUNG, CH
- AL2O3 FILMS FORMED BY ANODIC-OXIDATION OF AL-1 WEIGHT PERCENT SI-0.5 WEIGHT PERCENT CU FILMS / CHIU, RL;CHANG, PH;TUNG, CH
- THE EFFECT OF SI AND CU ON THE INTERACTIONS BETWEEN AL FILMS AND A TIW BARRIER LAYER / CHANG, PH;CHEN, HM;LIU, HY
- The effect of preheating treatment on anodic Al2O3 formed on sputtered Al thin films / Chiu, RL;Chang, PH;Tung, CH
- Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300 degrees C / Luo, JS;Lin, WT;Chang, CY;Shih, PS
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