Bipolar conductivity in amorphous HfO(2)

Full metadata record

DC Field	Value	Language
dc.contributor.author	Islamov, D. R.	en_US
dc.contributor.author	Gritsenko, V. A.	en_US
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Chin, A.	en_US
dc.date.accessioned	2014-12-08T15:27:56Z	-
dc.date.available	2014-12-08T15:27:56Z	-
dc.date.issued	2011-08-15	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.3626599	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20212	-
dc.description.abstract	This study calculates the contribution of electrons and holes to HfO(2) conductivity in Si/HfO(2)/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO(2), allowing HfO(2) to exhibit two-band conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626599]	en_US
dc.language.iso	en_US	en_US
dc.title	Bipolar conductivity in amorphous HfO(2)	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.3626599	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	99	en_US
dc.citation.issue	7	en_US
dc.citation.spage		en_US
dc.citation.epage		en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
Appears in Collections:	Articles