CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O

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DC Field	Value	Language
dc.contributor.author	CHAO, TS	en_US
dc.contributor.author	LEI, TF	en_US
dc.date.accessioned	2014-12-08T15:03:30Z	-
dc.date.available	2014-12-08T15:03:30Z	-
dc.date.issued	1995-03-01	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/1.2048576	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2027	-
dc.description.abstract	Growth mechanisms of three different orientations Si wafer oxidized in N2O have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 Angstrom. From our results, this phenomenon is closely related with the initial native oxide before oxidation.	en_US
dc.language.iso	en_US	en_US
dc.title	CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O	en_US
dc.type	Letter	en_US
dc.identifier.doi	10.1149/1.2048576	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	142	en_US
dc.citation.issue	3	en_US
dc.citation.spage	L34	en_US
dc.citation.epage	L35	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1995QL58500002	-
dc.citation.woscount	1	-
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