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dc.contributor.authorLin, Chun-Yuen_US
dc.contributor.authorLi, Yi-Juen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2014-12-08T15:28:04Z-
dc.date.available2014-12-08T15:28:04Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4673-0859-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/20338-
dc.description.abstractA novel design of high-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic system-on-chip (SoC) in a 0.18-mu m CMOS process was proposed. This design can deliver the required stimulus current within a specific range of loading impedance. Besides, this design in 0.18-mu m low-voltage CMOS process can be operated at high voltage by using only low-voltage transistors. Without using high-voltage transistors, the process step can be reduced and the fabrication yield can be improved. The proposed design can be further integrated for the electronic epilepsy prosthetic SoC applications.en_US
dc.language.isoen_USen_US
dc.titleHigh-Voltage-Tolerant Stimulator with Adaptive Loading Consideration for Electronic Epilepsy Prosthetic SoC in a 0.18-mu m CMOS Processen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 IEEE 10TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS)en_US
dc.citation.spage125en_US
dc.citation.epage128en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000310372500032-
Appears in Collections:Conferences Paper