Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, Chun-Yu | en_US |
dc.contributor.author | Li, Yi-Ju | en_US |
dc.contributor.author | Ker, Ming-Dou | en_US |
dc.date.accessioned | 2014-12-08T15:28:04Z | - |
dc.date.available | 2014-12-08T15:28:04Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.isbn | 978-1-4673-0859-5 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/20338 | - |
dc.description.abstract | A novel design of high-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic system-on-chip (SoC) in a 0.18-mu m CMOS process was proposed. This design can deliver the required stimulus current within a specific range of loading impedance. Besides, this design in 0.18-mu m low-voltage CMOS process can be operated at high voltage by using only low-voltage transistors. Without using high-voltage transistors, the process step can be reduced and the fabrication yield can be improved. The proposed design can be further integrated for the electronic epilepsy prosthetic SoC applications. | en_US |
dc.language.iso | en_US | en_US |
dc.title | High-Voltage-Tolerant Stimulator with Adaptive Loading Consideration for Electronic Epilepsy Prosthetic SoC in a 0.18-mu m CMOS Process | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2012 IEEE 10TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS) | en_US |
dc.citation.spage | 125 | en_US |
dc.citation.epage | 128 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000310372500032 | - |
Appears in Collections: | Conferences Paper |