Sapphire surface patterning using femtosecond laser micromachining

Abstract

This study presents an alternative method for micron-resolution patterning of a sapphire surface utilizing the characteristic of an ultra-short pulse (10(-15) s) from ytterbium (Yb) femtosecond laser (FS-laser) irradiation. Conventional processes often involve several steps, such as wet chemical or dry etching, for surface structuring of sapphire. In this study, two-dimensional array patterns on the sapphire surface with an area of 5x5 mm(2) and a depth of 1.2 +/- 0.1 mu m can be directly and easily fabricated by a single step of the FS-laser process, which involves 350-fs laser pulses with a wavelength of 517 nm at a repetition rate of 100 kHz. The measured ablation depths on the sapphire surface display that the proposed process can be under well-controlled conditions. Based on the design changes for being quickly implemented in the micromachining process, a FS laser can be a promising and competitive tool for patterning sapphire with an acceptable quality for industrial usage.