標題: | Low-Operating-Voltage Ultrathin Junctionless Poly-Si Thin-Film Transistor Technology for RF Applications |
作者: | Tsai, Tzu-I Chen, Kun-Ming Lin, Horng-Chih Lin, Ting-Yao Su, Chun-Jung Chao, Tien-Sheng Huang, Tiao-Yuan 電子物理學系 電子工程學系及電子研究所 Department of Electrophysics Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Junctionless (JL);low-frequency noise (LFN);poly-Si;radio frequency (RF);thin-film transistor (TFT) |
公開日期: | 1-Nov-2012 |
摘要: | In this letter, for the first time, we experimentally investigate the radio-frequency (RF) characteristics and low-frequency noise (LFN) of n-type planar junctionless (JL) poly-Si thin-film transistors (TFTs). The fabricated JL devices show remarkable dc performance with good current drive and a high on-current/off-current ratio of 8 x 10(7). Furthermore, with the implementation of an in situ phosphorus-doped channel architecture and a salicide process, the JL device with a channel length of 0.4 mu m exhibits a cutoff frequency (f(t)) of 3.36 GHz and a maximum oscillation frequency (f(max)) around 7.37 GHz at a drain bias of 2 V. As far as LFN is concerned, the JL device shows approximately four orders of magnitude lower drain-current noise power spectral density (S-id) over conventional inversion-mode counterparts. These results demonstrate that the JL poly-Si TFT technique is promising for RF modules implemented in system-on-panel applications. |
URI: | http://dx.doi.org/10.1109/LED.2012.2212174 http://hdl.handle.net/11536/20403 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2012.2212174 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 33 |
Issue: | 11 |
起始頁: | 1565 |
結束頁: | 1567 |
Appears in Collections: | Articles |
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