標題: Effect of Shape and Size on Electron Transition Energies for Nanoscale InAs/GaAs Quantum Rings
作者: Li, Yiming
Lu, Hsiao-Mei
友訊交大聯合研發中心
D Link NCTU Joint Res Ctr
關鍵字: nanoscale quantum ring;InAs/GaAs;energy spectra;geometry and magnetic field effects;computer simulation
公開日期: 1-十二月-2003
摘要: In this paper, we study the impact of the sizes and the shapes of nanoscale semiconductor quantum rings on the electron and hole energy states. A three-dimensional effective one band Schrodinger equation is solved numerically for semiconductor quantum rings with disk, cut-bottom-elliptical, and conical shapes. For small InAs/GaAs quantum rings we have found a sufficient difference in the ground state and excited state (l = -1) electron energies for rings with the same volume but different shapes. Volume dependence of the electron and hole energies can vary over a wide range and depends significantly on the ring shapes. It is found that a non-periodical oscillation of the energy band gap between the lowest electron and hole states as a function of external magnetic fields.
URI: http://dx.doi.org/10.1023/B:JCEL.0000011476.26741.a3
http://hdl.handle.net/11536/20515
ISSN: 1569-8025
DOI: 10.1023/B:JCEL.0000011476.26741.a3
期刊: JOURNAL OF COMPUTATIONAL ELECTRONICS
Volume: 2
Issue: 2-4
起始頁: 487
結束頁: 490
顯示於類別:期刊論文


文件中的檔案:

  1. 000208478700076.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。