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dc.contributor.authorStrelcov, E.en_US
dc.contributor.authorKim, Y.en_US
dc.contributor.authorYang, J. C.en_US
dc.contributor.authorChu, Y. H.en_US
dc.contributor.authorYu, P.en_US
dc.contributor.authorLu, X.en_US
dc.contributor.authorJesse, S.en_US
dc.contributor.authorKalinin, S. V.en_US
dc.date.accessioned2014-12-08T15:28:31Z-
dc.date.available2014-12-08T15:28:31Z-
dc.date.issued2012-11-05en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4764939en_US
dc.identifier.urihttp://hdl.handle.net/11536/20626-
dc.description.abstractThe dependence of field-on and field-off hysteresis loop shape in Piezoresponse Force Microscopy (PFM) on driving voltage, V-ac, is explored. A nontrivial dependence of hysteresis loop parameters on measurement conditions is observed. The strategies to distinguish between paraelectric and ferroelectric states with small coercive bias and separate reversible hysteretic and non-hysteretic behaviors are suggested. Generally, measurement of loop evolution with V-ac is a necessary step to establish the veracity of PFM hysteresis measurements. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764939]en_US
dc.language.isoen_USen_US
dc.titleRole of measurement voltage on hysteresis loop shape in Piezoresponse Force Microscopyen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4764939en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume101en_US
dc.citation.issue19en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000311320100046-
dc.citation.woscount2-
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