TRANSIENT SIMULATION OF EPROM WRITING CHARACTERISTICS, WITH A NOVEL HOT-ELECTRON INJECTION MODEL

標題:	TRANSIENT SIMULATION OF EPROM WRITING CHARACTERISTICS, WITH A NOVEL HOT-ELECTRON INJECTION MODEL
作者:	HUANG, CM WANG, TH 交大名義發表電子工程學系及電子研究所 National Chiao Tung University Department of Electronics Engineering and Institute of Electronics
公開日期:	1-二月-1995
摘要:	A two-dimensional transient simulation of EPROM writing characteristics is presented. A Monte Carlo-based hot electron injection model which accounts for Fowler-Nordheim tunneling and thermionic emission has been included in the simulation. The simulated EPROM writing transient characteristics is compared favorably with experimental results for channel lengths down to 0.5 mu m. The importance of the two injection mechanisms, thermionic emission and quantum tunneling, is evaluated.
URI:	http://dx.doi.org/10.1016/0038-1101(94)00087-V http://hdl.handle.net/11536/2083
ISSN:	0038-1101
DOI:	10.1016/0038-1101(94)00087-V
期刊:	SOLID-STATE ELECTRONICS
Volume:	38
Issue:	2
起始頁:	461
結束頁:	464
顯示於類別：	期刊論文

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